1 Electronic and Optical Properties of γ- and θ- Alumina by First Principle Calculations Ahmed S. Jbara1, 2, 3, *, Zulkafli Ot
Band offset determination for amorphous Al2O3 deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire
Energy Band Alignment of a Monolayer MoS2 with SiO2 and Al2O3 Insulators from Internal Photoemission - Shlyakhov - 2019 - physica status solidi (a) - Wiley Online Library
Band Offset and Electron Affinity of Monolayer MoSe2 by Internal Photoemission
JSTS - Journal of Semiconductor Technology and Science
Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying
Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator | Scientific Reports
Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions: Applied Physics Letters: Vol 104, No 19
Optical Energy Gap of Ti:Al2O3 Single Crystals
a) Schematic band gap diagram of the n -GaN /Al2O3/ p -ZnO structure.... | Download Scientific Diagram
Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetri
Band diagram of the TiO2/MAPbI3 and Al2O3/MAPbI3 interfaces,... | Download Scientific Diagram
Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetries | The Journal of Physical Chemistry C
Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor: Applied Physics Letters: Vol 107, No 14
Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetries | The Journal of Physical Chemistry C
Optical and Surface Studies of α-Al2O3 Powders
Energy-band alignment of atomic layer deposited (HfO<sub>2</sub>)<sub><em> x</em></sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>1 − <em> x</em></sub> gate dielectrics on 4H-SiC<xref ref-type="fn" rid="cpb142427fn1">*</xref>
Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap type through density functional theory computations - ScienceDirect
BALD Engineering - Born in Finland, Born to ALD: Study on band-gaps of a variety of classic ALD high-k´s via REELS
Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25–0.74
Calculated band alignment between HfO2, Al2O3, InGaAs, and GaAs. The... | Download Scientific Diagram
Figure 5 from Band Gap and Band Offset of Ga2O3 and (AlxGa1−x)2O3 Alloys | Semantic Scholar
arXiv:1702.06498v1 [cond-mat.mtrl-sci] 21 Feb 2017
![PDF] Band gap tuning of amorphous Al oxides by Zr alloying | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/61c9ff559ecfa5e01e3660a2ec9ac70b1cebe4b1/4-TableI-1.png "PDF] Band gap tuning of amorphous Al oxides by Zr alloying | Semantic Scholar")
PDF] Band gap tuning of amorphous Al oxides by Zr alloying | Semantic Scholar
arXiv:1703.01778v1 [cond-mat.mtrl-sci] 6 Mar 2017
